ELECTRONIC TRANSPORT INVESTIGATION OF ARSENIC-IMPLANTED SILICON .2. ANNEALING KINETICS OF DEFECTS

被引：14

作者：

CHRISTOFIDES, C ^{[1
]}

GHIBAUDO, G ^{[1
]}

JAOUEN, H ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT,PHYS COMPOSANTS SEMICOND LAB,CNRS,UNITE 840,F-38031 GRENOBLE,FRANCE

来源：

关键词：

D O I：

10.1063/1.343195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4840 / 4844

页数：5

共 18 条

[1] BOLTAKS B, 1977, DIFFUSION POINT DEFE
[2] CHRISTEL LA, 1981, J APPL PHYS, V52, P713
[3] ELECTRONIC TRANSPORT INVESTIGATION OF ARSENIC-IMPLANTED SILICON .1. ANNEALING INFLUENCE ON THE TRANSPORT-COEFFICIENTS
CHRISTOFIDES, C
JAOUEN, H
GHIBAUDO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4832 - 4839
[4] CHRISTOFIDES C, 1986, THESIS LPCS ENSERG G
[5] EHRSTEIN JR, 1979, NONDESTRUCTIVE EVALU
[6] FULLER CS, 1959, SEMICONDUCTORS, pCH5
[7] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &
[8] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +
[9] ELECTRONIC TRANSPORT INVESTIGATIONS ON SILICON DAMAGED BY ARSENIC ION-IMPLANTATION
JAOUEN, H
GHIBAUDO, G
CHRISTOFIDES, C
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1699 - 1704
[10] KITTEL C, 1983, SOLID STATE PHYSICS