ELECTRONIC TRANSPORT INVESTIGATIONS ON SILICON DAMAGED BY ARSENIC ION-IMPLANTATION

被引：9

作者：

JAOUEN, H

GHIBAUDO, G

CHRISTOFIDES, C

机构：

来源：

关键词：

D O I：

10.1063/1.337260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1699 / 1704

页数：6

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