ELIMINATION OF PARASITIC BIPOLAR-INDUCED BREAKDOWN EFFECTS IN ULTRA-THIN SOI MOSFETS USING NARROW-BANDGAP-SOURCE (NBS) STRUCTURE

被引：11

作者：

SIM, JH

CHOI, CH

KIM, K

机构：

[1] Memory Division, Samsung Electronics Corporation, Kyungki-Do

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 08期

关键词：

D O I：

10.1109/16.398664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we introduce the Si/SiGe narrow-bandgap-source (NBS) SOI device structure in order to improve the low drain-to-source breakdown voltage (V-BD) in ultra-thin SOI devices. Reducing the potential barrier of valence band between source and body by applying the SiGe layer at the source region, we can improve the drain-to-source breakdown voltage by suppressing the hole accumulation in the body. As comfirmed by 2D simulation results, NBS-SOI devices provide excellent performance compared to conventional SOI devices.

引用

页码：1495 / 1502

页数：8

共 26 条

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