FINE-STRUCTURE OF FREQUENCY CHIRPING AND FM SIDEBAND GENERATION IN SINGLE-LONGITUDINAL-MODE SEMICONDUCTOR-LASERS UNDER 10-GHZ DIRECT INTENSITY MODULATION
被引:7
作者:
LIN, C
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AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
LIN, C
[1
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EISENSTEIN, G
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AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
EISENSTEIN, G
[1
]
BURRUS, CA
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AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
BURRUS, CA
[1
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TUCKER, RS
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AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
TUCKER, RS
[1
]
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[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733