CDTE-CD1-XMNXTE MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY PULSED LASER EVAPORATION AND EPITAXY

Structural and optical properties of (001) CdTe-Cd1-xMnxTe (x = 0.10) multiple quantum well structures grown by pulsed laser evaporation and epitaxy (PLEE) are investigated. The layers are grown on (001) CdZnTe wafers held at a temperature in the range of 210-230-degrees-C. Secondary-ion mass spectroscopy in-depth profiles reveal that highly uniform structures are grown. Numerical analysis of double crystal x-ray diffraction results demonstrates high structural quality of the layers and indicates partial relaxation of the strain in these structures. Low-temperature photoluminescence exhibits excitonic recombinations in the CdTe wells whereas photoluminescence from the Cd1-xMnxTe barriers is not observed. The chemical composition of the barriers deduced from photoluminescence is in excellent agreement with the intended chemical composition set during growth.