EFFECTS OF THE CRYSTALS NONZERO ELECTRICAL-CONDUCTIVITY ON THE ROTATIONALLY DRIVEN MELT MOTION DURING CZOCHRALSKI SILICON GROWTH WITH A UNIFORM, TRANSVERSE MAGNETIC-FIELD

This paper treats the melt motion during the Czochralski growth of silicon with a uniform, horizontal, steady magnetic field. Here we only consider the motion driven by the rotations of the crystal and crucible about their common vertical axis. Our results show that the rotationally driven melt motion for the correct non-zero electrical conductivity of the crystal is very different from that for an electrically insulating crystal. The rotating, electrically conducting crystal acts as a generator which drives electric currents through the melt near the crystal face and free surface. These currents produce an electromagnetic body force which drives an azimuthal melt motion in the direction opposite to the direction of the crystal's rotation. We found that the azimuthal velocity is virtually independent of the azimuthal coordinate, while the radial and axial velocities are virtually zero.