DIFFERENTIAL NEGATIVE-RESISTANCE IN A ONE-DIMENSIONAL MESOSCOPIC SYSTEM DUE TO SINGLE-ELECTRON TUNNELING

被引：13

作者：

BROWN, RJ ^{[1
]}

PEPPER, M ^{[1
]}

AHMED, H ^{[1
]}

HASKO, DG ^{[1
]}

RITCHIE, DA ^{[1
]}

FROST, JEF ^{[1
]}

PEACOCK, DC ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] GEC HIRST RES LABS,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 08期

关键词：

D O I：

10.1088/0953-8984/2/8/017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The authors present studies in the DC voltage bias regime of a split-gate device utilising the high-mobility electron gas of a GaAs/AlGaAs heterojunction. They find oscillations in the I-V characteristics of a one-dimensional channel which they relate to single-electron tunnelling events in the channel. The effects are explained using a mesoscopic model possibly involving the presence of an impurity in the channel and the role of the device capacitance. The particular aspect of this system of importance is that unlike in conventional capacitors, the capacitance and resistance of depleted regions varies with the trapped charge.

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页码：2105 / 2109

页数：5

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