THE EPITAXIAL SYNTHESIS OF DIAMOND BY THE DEPOSITION OF LOW-ENERGY CARBON-IONS

被引：48

作者：

FREEMAN, JH

TEMPLE, W

GARD, GA

机构：

来源：

VACUUM | 1984年 / 34卷 / 1-2期

关键词：

D O I：

10.1016/0042-207X(84)90147-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：305 / 314

页数：10

共 20 条

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[4] EPITAXIAL SYNTHESIS OF DIAMOND BY CARBON-ION DEPOSITION AT LOW-ENERGY [J].

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TEMPLE, W ;

GARD, GA .

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[5]

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[8]

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[9] HARD CONDUCTING IMPLANTED DIAMOND LAYERS [J].

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[10]

NELSON R, IN PRESS

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