ANOMALOUS BEHAVIORS OBSERVED IN THE ISOTHERMAL DESORPTION OF GAAS SURFACE OXIDES

被引:41
作者
YAMADA, M
IDE, Y
机构
[1] Optoelectronics Technology Research Laboratory (OTL), Tsukuba, Ibaraki, 300-26
关键词
CRYSTALLINE-AMORPHOUS INTERFACES; GALLIUM ARSENIDE; GALLIUM OXIDE; MODELS OF SURFACE KINETICS; SURFACE CHEMICAL REACTION; SURFACE STRUCTURE; THERMAL DESORPTION; THERMAL DESORPTION SPECTROSCOPY;
D O I
10.1016/0039-6028(95)80057-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Isothermal desorption of oxide layers formed on GaAs(001) surfaces of arsenic-rich c(4 x 4) reconstructions was observed at about 540 degrees C using a quadrupole mass spectrometer. Ga2O and molecular arsenic desorbed in parallel. After long induction periods of the order of 10 min, their desorption rates increased exponentially, and then decreased steeply due to the completion of oxide removal. The behaviors observed in the final stage of oxide desorption suggest that the removal of the oxide layer proceeds through formation of voids, and that the oxide desorption rate is proportional to the area of the voids.
引用
收藏
页码:L914 / L918
页数:5
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