BROADLY-TUNABLE RESONANT-CAVITY LIGHT-EMITTING DIODE

被引：26

作者：

LARSON, MC

HARRIS, JS

机构：

[1] Solid-State Electronics Laboratory, Stanford University, Stanford, CA 94305

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 11期

关键词：

D O I：

10.1109/68.473467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microelectromechanical wavelength tuning is demonstrated for the first time in a resonant-cavity light-emitting diode. The device utilizes a deformable-membrane top mirror suspended by an air gap above a diode-active region and bottom mirror. Applied membrane-substrate bias produces an electrostatic force which reduces the air-gap thickness, and therefore, the resonant wavelength. We report broad tunability of nearly 40 mn and spectral linewidths as narrow as 1.9 mn (2.6 meV) for operation near 950 mn.

引用

页码：1267 / 1269

页数：3

共 8 条

[1] CONTINUOUS WAVELENGTH TUNING OF 2-ELECTRODE VERTICAL CAVITY SURFACE EMITTING LASERS [J].

CHANGHASNAIN, CJ ;

HARBISON, JP ;

ZAH, CE ;

FLOREZ, LT ;

ANDREADAKIS, NC .

ELECTRONICS LETTERS, 1991, 27 (11) :1002-1003

[2] FREQUENCY TUNING OF A DOUBLE-HETEROJUNCTION ALGAAS/GAAS-VERTICAL-CAVITY SURFACE-EMITTING LASER BY A SERIAL INTEGRATED IN-CAVITY MODULATOR DIODE [J].

GMACHL, C ;

KOCK, A ;

ROSENBERGER, M ;

GORNIK, E ;

MICOVIC, M ;

WALKER, JF .

APPLIED PHYSICS LETTERS, 1993, 62 (03) :219-221

[3] ENHANCED SPECTRAL POWER-DENSITY AND REDUCED LINEWIDTH AT 1.3-MU-M IN AN INGAASP QUANTUM-WELL RESONANT-CAVITY LIGHT-EMITTING DIODE [J].

HUNT, NEJ ;

SCHUBERT, EF ;

LOGAN, RA ;

ZYDZIK, GJ .

APPLIED PHYSICS LETTERS, 1992, 61 (19) :2287-2289

[4]

LARSON MC, 1995, MAR OSA QUANT OPT TO

[5]

Mastrangelo C. H., 1993, Proceedings. IEEE. Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.93CH3265-6), P77, DOI 10.1109/MEMSYS.1993.296955

[6] RESONANT CAVITY LIGHT-EMITTING DIODE [J].