FREQUENCY TUNING OF A DOUBLE-HETEROJUNCTION ALGAAS/GAAS-VERTICAL-CAVITY SURFACE-EMITTING LASER BY A SERIAL INTEGRATED IN-CAVITY MODULATOR DIODE

被引：10

作者：

GMACHL, C ^{[1
]}

KOCK, A ^{[1
]}

ROSENBERGER, M ^{[1
]}

GORNIK, E ^{[1
]}

MICOVIC, M ^{[1
]}

WALKER, JF ^{[1
]}

机构：

[1] CONSORZIO INTERUNIV FIS MAT,TECNOL AVANZATE SUPERFICI & CATALISI LAB,I-34012 TRIESTE,ITALY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.108998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The frequency tuning of a vertical-cavity surface-emitting laser through current injection is reported herein. This was achieved by integrating an AlGaAs graded-index p-n-modulator diode with a double-hetero GaAs/AlGaAs laser diode in a vertical cavity formed by an AlAs/AlGaAs-Bragg reflector and a metallic mirror. Experimental results show an obtained gradient of frequency shift up to 0.93 GHz/mA by the modulator current. This effect is at present restricted to approximately 40 mA due to thermal effects. A theoretical model based on the plasma effect and thermal effects agrees with the experimental values and predicts a maximum value for the gradient of frequency shift of 1.15 GHz/mA with the presented structure.

引用

页码：219 / 221

页数：3

共 13 条

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