EFFECT OF CAVITY SIZE ON LASTING CHARACTERISTICS OF A DISTRIBUTED BRAGG REFLECTOR-SURFACE EMITTING LASER WITH BURIED HETEROSTRUCTURE

被引:5
作者
MORI, K
ASAKA, T
IWANO, H
OGURA, M
FUJII, S
OKADA, T
MUKAI, S
机构
[1] SEIKO EPSON CORP,ELECTROTECH LAB,FUJIMI,NAGANO 39902,JAPAN
[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
关键词
D O I
10.1063/1.107353
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transverse-mode characteristics of the distributed Bragg reflector-surface emitting laser diode with buried heterostructure were investigated as a function of the cavity size. Stable, fundamental transverse-mode operation was achieved for cavity openings of 4-mu-m in diameter and smaller. The effect of cavity size on threshold current and polarization characteristics is also discussed.
引用
收藏
页码:21 / 22
页数:2
相关论文
共 7 条
[1]   TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE-EMITTING LASERS [J].
CHANGHASNAIN, CJ ;
ORENSTEIN, M ;
VONLEHMEN, A ;
FLOREZ, LT ;
HARBISON, JP ;
STOFFEL, NG .
APPLIED PHYSICS LETTERS, 1990, 57 (03) :218-220
[2]   SUBMILLIAMP THRESHOLD VERTICAL-CAVITY LASER-DIODES [J].
GEELS, RS ;
COLDREN, LA .
APPLIED PHYSICS LETTERS, 1990, 57 (16) :1605-1607
[3]  
IBARAKI A, 1990, 12TH P IEEE INT SEM
[4]   SURFACE EMITTING SEMICONDUCTOR-LASERS [J].
IGA, K ;
KOYAMA, F ;
KINOSHITA, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) :1845-1855
[5]   ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SINGLE-QUANTUM-WELL MICROLASER DIODES [J].
LEE, YH ;
JEWELL, JL ;
SCHERER, A ;
MCCALL, SL ;
HARBISON, JP ;
FLOREZ, LT .
ELECTRONICS LETTERS, 1989, 25 (20) :1377-1378
[6]   MOCVD GROWTH OF GAAS/ALGAAS WAVELENGTH RESONANT PERIODIC GAIN VERTICAL CAVITY SURFACE-EMITTING LASER [J].
SCHAUS, CF ;
SCHAUS, HE ;
SUN, S ;
RAJA, MYA ;
BRUECK, SRJ .
ELECTRONICS LETTERS, 1989, 25 (08) :538-539
[7]   LOW-THRESHOLD SURFACE-EMITTING LASER-DIODES WITH DISTRIBUTED BRAGG REFLECTORS AND CURRENT BLOCKING LAYERS [J].
SHIMADA, M ;
ASAKA, T ;
YAMASAKI, Y ;
IWANO, H ;
OGURA, M ;
MUKAI, S .
APPLIED PHYSICS LETTERS, 1990, 57 (13) :1289-1291