LOW-THRESHOLD SURFACE-EMITTING LASER-DIODES WITH DISTRIBUTED BRAGG REFLECTORS AND CURRENT BLOCKING LAYERS

被引：11

作者：

SHIMADA, M ^{[1
]}

ASAKA, T ^{[1
]}

YAMASAKI, Y ^{[1
]}

IWANO, H ^{[1
]}

OGURA, M ^{[1
]}

MUKAI, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 13期

关键词：

D O I：

10.1063/1.104096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaAs/GaAs surface-emitting laser diodes (SELDs) with distributed Bragg reflectors (DBRs) and current blocking layers are fabricated with the combination of a two-step epitaxial growth and the reactive ion beam etching (RIBE) technique. An Al0.1Ga0.9As/Al0.7Ga 0.3As multilayer and an amorphous silicon (a-Si)/silicon dioxide (SiO2) multilayer are employed for the lower and upper mirrors, respectively. The active region has a 5×5 μm or 4 μm φ area and a 0.8 μm thickness. The minimum threshold current is 3.3 mA under pulsed condition and 4.1 mA under continuous wave (cw) operation at 12 °C with junction-side-up configuration. Stable single longitudinal mode is observed, and far-field pattern (FFP) indicates higher transverse mode operation.

引用

页码：1289 / 1291

页数：3