SURFACE-EMITTING LASER DIODE WITH DISTRIBUTED BRAGG REFLECTOR AND BURIED HETEROSTRUCTURE

被引：13

作者：

OGURA, M ^{[1
]}

MUKAI, S ^{[1
]}

SHIMADA, M ^{[1
]}

ASAKA, T ^{[1
]}

YAMASAKI, Y ^{[1
]}

SEKI, T ^{[1
]}

IWANO, H ^{[1
]}

机构：

[1] SEIKO EPSON CORP,ELECTR DEVICE RES DEPT,NAGANO 39902,JAPAN

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 01期

关键词：

LEDs; Optoelectronics; Semiconductor growth; Semiconductor lasers;

D O I：

10.1049/el:19900012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface-emitting laser diode (SELD) with distributed Bragg reflector (DBR) and buried heterostructure (BH) is fabricated by the metalorganic chemical vapour deposition (MOCVD), reactive ion beam etching (RIBE) and liquid phase epitaxial (LPE) regrowth techniques. An Al0.1Ga0.9As/Al0.7Ga0.3As multilayer is employed for the lower reflector. The active region is embedded with Al0.4Ga0.6As current blocking layers. The threshold current is 28 mA, and the spectral width is 2.5 Å. A 2 × 2 array is also demonstrated. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：18 / 19

页数：2

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