PHOTOCONDUCTIVITY OF ZN-DOPED GAN

被引：17

作者：

EJDER, E ^{[1
]}

FAGERSTROM, PO ^{[1
]}

机构：

[1] UNIV LUND,INST TECHNOL,DEPT SOLID STATE PHYS,LUND,SWEDEN

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1975年 / 36卷 / 04期

关键词：

D O I：

10.1016/0022-3697(75)90024-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：289 / 292

页数：4

共 23 条

[1] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J].

BEBB, HB ;

CHAPMAN, RA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) :2087-&

[2] BAND STRUCTURES OF GAN AND ALN [J].

BLOOM, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) :2027-&

[3] DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].

DINGLE, R ;

ILEGEMS, M .

SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&

[4]

EJDER E, IN PRESS

[5]

FORMENKO VS, 1966, HDB THERMIONIC PROPE

[6] LUMINESZENZEIGENSCHAFTEN UND PHOTOLEITUNGSEIGENSCHAFTEN VON DOTIERTEM GAN [J].

GRIMMEISS, HG ;

GROTH, R ;

MAAK, J .

ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1960, 15 (09) :799-806

[7]

GRIMMEISS HG, TO BE PUBLISHED

[8] LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN [J].

ILEGEMS, M ;

LOGAN, RA ;

DINGLE, R .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3797-&

[9] ELECTRICAL PROPERTIES OF NORMAL TYPE VAPOR-GROWN GALLIUM NITRIDE [J].

ILEGEMS, M ;

MONTGOME.HC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (05) :885-895

[10] LUMINESCENCE OF BE-DOPED AND MG-DOPED GAN [J].

ILEGEMS, M ;

DINGLE, R .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4234-4235

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