NITROGEN CONCENTRATION IN GAP DIODES DETERMINED BY PHOTOVOLTAGE MEASUREMENTS

被引:3
作者
GOLLNAST, H [1 ]
RICHTER, G [1 ]
HERRMANN, H [1 ]
机构
[1] DAWB,ZENT INST ELEKTR PHYS,DDR-108 BERLIN,GER DEM REP
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 38卷 / 01期
关键词
D O I
10.1002/pssa.2210380169
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K89 / K91
页数:3
相关论文
共 10 条
[1]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&
[2]  
FLYNN CP, 1972, POINT DEFECTS DIFFUS, P256
[3]   SECOND-ORDER RAMAN-SPECTRA AND PHONON DISPERSION IN GAP [J].
HOFF, RM ;
IRWIN, JC .
CANADIAN JOURNAL OF PHYSICS, 1973, 51 (01) :63-76
[4]   PHOTOCURRENT MEASUREMENTS ON GAP - N GREEN-LIGHT-EMITTING DIODES [J].
KRESSEL, H ;
LADANY, I .
APPLIED PHYSICS LETTERS, 1973, 22 (05) :224-226
[5]   NITROGEN CONCENTRATION IN GAP MEASURED BY OPTICAL-ABSORPTION AND BY PROTON-INDUCED NUCLEAR-REACTIONS [J].
LIGHTOWL.EC ;
NORTH, JC ;
LORIMOR, OG .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :2191-2200
[6]   EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP [J].
LOGAN, RA ;
WHITE, HG ;
WIEGMANN, W .
SOLID-STATE ELECTRONICS, 1971, 14 (01) :55-&
[7]   PHONON STRUCTURE OF IMPURITY-RELATED OPTICAL SPECTRA IN INSULATORS [J].
MOSTOLLER, M ;
GANGULY, BN ;
WOOD, RF .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (06) :2015-+
[8]   CALCULATION OF SOLUBILITY AND SOLID-GAS DISTRIBUTION COEFFICIENT OF N IN GAP [J].
STRINGFELLOW, GB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (12) :1780-+
[9]   ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].
THOMAS, DG ;
HOPFIELD, JJ .
PHYSICAL REVIEW, 1966, 150 (02) :680-&
[10]   DIFFUSION OF ZINC IN GALLIUM PHOSPHIDE UNDER EXCESS PHOSPHORUS PRESSURE FROM A ZNP2 SOURCE [J].
WIDMER, AE ;
FEHLMANN, R .
SOLID-STATE ELECTRONICS, 1971, 14 (05) :423-&