EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP

被引：114

作者：

LOGAN, RA

WHITE, HG

WIEGMANN, W

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 01期

关键词：

D O I：

10.1016/0038-1101(71)90048-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：55 / &

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共 15 条

[1] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2
[2] BERGH AA, 1968, 1968 IEEE INT EL DEV
[3] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE
DEAN, PJ
THOMAS, DG
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 690 - &
[4] GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES NEAR ROOM TEMPERATURE
DEAN, PJ
GERSHENZON, M
KAMINSKY, G
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5332 - +
[5] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
FAULKNER, RA
[J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &
[6] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS
GERSHENZON, M
LOGAN, RA
NELSON, DF
[J]. PHYSICAL REVIEW, 1966, 149 (02): : 580 - +
[7] HACKETT WH, TO BE PUBLISHED
[8] EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GAP P-N JUNCTIONS
LOGAN, RA
WHITE, HG
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (04) : 139 - &
[9] P-N JUNCTIONS IN GAP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY -2 PERCENT AT 25 DEGREES C
LOGAN, RA
WHITE, HG
TRUMBORE, FA
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (07) : 206 - &
[10] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP
LORENZ, MR
PILKUHN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4094 - &