EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP

[11] MORGAN TN, 1964, IEEE T ELECTRON DEVI, VED11, P533

[12] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[13] GAP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7 PERCENT [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 229 - +

[14] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 680 - &

[15] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (22) : 857 - &

[11] MORGAN TN, 1964, IEEE T ELECTRON DEVI, VED11, P533

[12] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[13] GAP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7 PERCENT [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 229 - +

[14] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 680 - &

[15] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (22) : 857 - &