DEPTH PROFILES OF MANGANESE IMPLANTS IN INP AFTER ANNEALING

被引：16

作者：

CHAPLAIN, R

GAUNEAU, M

LHARIDON, H

RUPERT, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.336031

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1803 / 1808

页数：6

共 19 条

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