DIFFUSION OF ZINC INTO ION-IMPLANTED IRON DOPED INDIUM-PHOSPHIDE

被引：9

作者：

FAVENNEC, PN

HENRY, L

SALVI, M

HUBER, AM

MORILLOT, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 08期

关键词：

D O I：

10.1016/0038-1101(83)90041-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：771 / 775

页数：5

共 14 条

[1]

CHRISTEL LA, 1981, THESIS STANFORD

[2] CHROMIUM GETTERING IN GAAS BY OXYGEN IMPLANTATION [J].

FAVENNEC, PN ;

GAUNEAU, M ;

LHARIDON, H ;

DEVEAUD, B ;

EVANS, CA ;

BLATTNER, RJ .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :271-273

[3] OPEN AMPOULE DIFFUSION IN INP [J].

FAVENNEC, PN ;

HENRY, L ;

GAUNEAU, M ;

LHARIDON, H ;

PELOUS, G .

ELECTRONICS LETTERS, 1980, 16 (22) :832-833

[4] ELECTRICAL-PROPERTIES OF ZINC DIFFUSED INDIUM-PHOSPHIDE [J].

HOOPER, A ;

TUCK, B .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :513-517

[5] DIFFUSION OF ZINC INTO ION-IMPLANTED GALLIUM-ARSENIDE [J].

HOUGHTON, AJN ;

TUCK, B .

SOLID-STATE ELECTRONICS, 1982, 25 (06) :441-448

[6]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[7] CHARACTERIZATION OF HIGHLY-ZINC-DOPED INP CRYSTALS [J].

MAHAJAN, S ;

BONNER, WA ;

CHIN, AK ;

MILLER, DC .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :165-168

[8] SOME EFFECTS OF ZN DIFFUSION ON MN-DOPED GAAS [J].

PEART, RF ;

WEISER, K ;

WOODALL, J ;

FERN, R .

APPLIED PHYSICS LETTERS, 1966, 9 (05) :200-&

[9]

PRICHADIN NB, 1975, SOV PHYS SEMICONDUCT, V8, P1294

[10]

TIEN PK, 1979, APPL PHYS LETT, V34, P701, DOI 10.1063/1.90611

← 1 2 →