HIGH-TEMPERATURE CW OPERATION OF GAAS/ALGAAS HIGH BARRIER GAIN OFFSET VCSELS

被引：5

作者：

CATCHMARK, JM

MORGAN, RA

ASOM, MT

GUTH, GD

MULLALLY, MWFT

CHRISTODOULIDES, DN

机构：

[1] HONEYWELL INC,CTR TECHNOL,BLOOMINGTON,MN 55420

[2] AT&T BELL LABS,CTR SOLID STATE TECHNOL,BREINIGSVILLE,PA 18031

[3] LEHIGH UNIV,DEPT ELECT ENGN & COMP SCI,BETHLEHEM,PA 18015

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 25期

关键词：

ALUMINUM GALLIUM ARSENIDE; GALLIUM ARSENIDE; VERTICAL CAVITY SURFACE EMITTING LASERS;

D O I：

10.1049/el:19941447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Greater than 150 degrees C CW lasing is achieved From an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only +/-0.93mA over a range greater than 150 degrees C. These results are compared to a low barrier VCSEL of similar design.

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页码：2136 / 2138

页数：3

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