Desorption of Ga and As atoms from GaAs surface induced by slow multiply charged Ar ions

被引：12

作者：

Itabashi, N

Mochiji, K

Shimizu, H

Ohtani, S

Kato, Y

Tanuma, H

Kobayashi, N

机构：

[1] JRDC,PRESTO,KAWAGUCHI,SAITAMA 332,JAPAN

[2] UNIV ELECTROCOMMUN,INST LASER SCI,CHOFU,TOKYO 182,JAPAN

[3] TOKYO METROPOLITAN UNIV,DEPT PHYS,HACHIOJI,TOKYO 19203,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12B期

关键词：

semiconductor surface; potential energy; slow multiply charged ion; ion decelerator; GaAs; atom desorption; charge state; Ar-q+; Coulomb explosion model; Coulomb repulsion;

D O I：

10.1143/JJAP.34.6861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A reaction on a semiconductor surface induced by the potential energy of slow multiply charged ions (MCIs) has been investigated. By using an Eimzel-type ion decelerator, beams of slow MCIs (Ar-q+; q less than or equal to 10) with an ion current of several tens of nanoamperes and with the kinetic energy (E(k)) of 30 X9 eV were produced. Irradiating a GaAs surface with the slow Ar-q+ induced the desorption of Ga and As atoms, and this desorption was almost independent of the E(k) but strongly dependent on the E(k); that is, on the potential energy (E(p)) of the Ar-q+. Th, effect of E(p) on atom desorption was analyzed quantitatively in terms of a model based on the Coulomb repulsion between holes generated on the surface through neutralization of the MCIs.

引用

页码：6861 / 6865

页数：5