ELECTRICAL AND OPTICAL-PROPERTIES OF P.ZNSNAS2/N.ZNSE HETERODIODE

被引：6

作者：

TAKENOSHITA, H

NAKAU, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 10期

关键词：

D O I：

10.1143/JJAP.22.1570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1570 / 1573

页数：4

共 14 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] PURIFICATION OF II-VI-COMPOUNDS BY SOLVENT EXTRACTION [J].

AVEN, M ;

WOODBURY, HH .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :53-54

[3] MEASUREMENT OF LIFETIME OF MINORITY CARRIERS IN SEMICONDUCTORS WITH A SCANNING ELECTRON MICROSCOPE [J].

HIGUCHI, H ;

TAMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (04) :316-+

[4] PREPARATION AND SEMICONDUCTING PROPERTIES OF SINGLE CRYSTALS OF ZNSNAS2 COMPOUND B [J].

MASUMOTO, K ;

ISOMURA, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (01) :163-&

[5]

MILNES AG, 1972, HETEROJUNCTIONS META, P51

[6] PREPARATION AND PROPERTIES OF CDSNP2/INP HETEROJUNCTIONS GROWN BY LPE FROM SN SOLUTION [J].

SHAY, JL ;

BACHMAN, KJ ;

BUEHLER, E .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1302-1310

[7] P-CUGA1-XINXS2-N-ZNSE HETEROJUNCTION BY LPE METHOD FROM IN SOLUTION [J].

TAKENOSHITA, H ;

NAKAU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) :1873-1878

[8] LPE GROWTH OF ZNSNAS2 ON A ZNSE SUBSTRATE FROM A SN SOLUTION [J].

TAKENOSHITA, H ;

NAKAU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04) :L212-L214

[9]

TAKENOSHITA H, 1982, JPN J APPL PHYS 1, V21, P412

[10] PREPARATION AND SOME PROPERTIES OF CUINSE2 ON ZNSE HETEROJUNCTION GROWN BY LPE [J].

TAKENOSHITA, H ;

NAKAU, T ;

NAKAO, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :33-41

← 1 2 →