LASER-COMPATIBLE INGAAS/GAAS STRAINED LAYER WAVE-GUIDE ELECTROABSORPTION MODULATORS

被引：7

作者：

MOSS, D ^{[1
]}

WILLIAMS, RL ^{[1
]}

DION, M ^{[1
]}

LANDHEER, D ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 24期

关键词：

D O I：

10.1063/1.105764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report single and double quantum well electroabsorption waveguide modulators that achieve exceptional performance as both lasers and modulators. Contrast ratios of 19 and 26 dB for a 400-mu-m long device have been achieved for the single and double well samples, respectively. When operated as lasers, the devices exhibit broad area threshold current densities of 56 A/cm2 and 87 A/cm2 for the single and double well samples, for cavity lengths longer than 3 mm. In addition, measurements of lasing wavelength versus cavity length show that both devices can operate as lasers at wavelengths compatible with their respective modulator performance.

引用

页码：3139 / 3141

页数：3

共 9 条

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CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) :497-507

[5]

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[6] EXTREMELY LOW THRESHOLD CURRENT STRAINED INGAAS/ALGAAS LASERS BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1991, 58 (17) :1816-1818

[7] WAVELENGTH TUNING IN LOW THRESHOLD CURRENT, PARTIALLY PUMPED INGAAS/ALGAAS RIDGE WAVE-GUIDE LASERS [J].

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APPLIED PHYSICS LETTERS, 1991, 59 (22) :2796-2798

[8] MULTIPLE QUANTUM WELL (MQW) WAVE-GUIDE MODULATORS [J].

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