STABLE SINGLE-LONGITUDINAL MODE-OPERATION OF 0.98-MU-M INGAAS/INGAASP/GAAS STRAINED QUANTUM-WELL DISTRIBUTED FEEDBACK LASERS

被引:6
作者
SAGAWA, M
HIRAMOTO, K
TSUCHIYA, T
TSUJI, S
机构
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji
关键词
SEMICONDUCTOR LASERS; LASERS;
D O I
10.1049/el:19921505
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 0-98 mum InGaAs/InGaAsP strained quantum well distributed feedback laser is demonstrated for the first time. The laser shows stable single longitudinal mode operation over a wide temperature change and output power. The temperature coefficient of the lasing wavelength is as small as 0.05 nm/degrees-C.
引用
收藏
页码:2336 / 2337
页数:2
相关论文
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[2]  
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[3]  
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[4]  
IJICHI T, 1990, 12TH IEEE INT SEM LA, P44
[5]   ADVANTAGES OF INGAASP SEPARATE CONFINEMENT LAYER IN 0.98-MU-M INGAAS/GAAS/INGAP STRAINED DQW LASERS FOR HIGH-POWER OPERATION AT HIGH-TEMPERATURE [J].
SAGAWA, M ;
HIRAMOTO, K ;
TSUCHIYA, T ;
TSUJI, S ;
UOMI, K .
ELECTRONICS LETTERS, 1992, 28 (17) :1639-1640