ADVANTAGES OF INGAASP SEPARATE CONFINEMENT LAYER IN 0.98-MU-M INGAAS/GAAS/INGAP STRAINED DQW LASERS FOR HIGH-POWER OPERATION AT HIGH-TEMPERATURE

被引：11

作者：

SAGAWA, M

HIRAMOTO, K

TSUCHIYA, T

TSUJI, S

UOMI, K

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 17期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19921043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The advantages of 0.98-mu-m InGaAs/GaAs/InGaP lasers with an InGaAsP SCH layer were investigated by comparing them with identical lasers with a conventional GaAs SCH layer. A higher internal quantum efficiency of 0.817 and low internal loss of 2.11 cm-1 were obtained due to the large conduction band discontinuity. Moreover, high power operation of 80 mW from an uncoated facet was obtained up to 70-degrees-C with the laser with the InGaAsP SCH layer.

引用

页码：1639 / 1640

页数：2

共 4 条

[1]

CHANGHASNAIN CJ, 1992, LOW THRESHOLD 098, P192

[2] SELF-ALIGNED INGAAS/GAAS/INGAP QUANTUM-WELL LASERS PREPARED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH 2 GROWTH STEPS [J].