ALUMINUM FREE INGAAS/GAAS/INGAASP/INGAP GRINSCH SL-SQW LASERS AT 0.98-MU-M

被引：22

作者：

OHKUBO, M

IJICHI, T

IKETANI, A

KIKUTA, T

机构：

[1] Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., Nishi-ku,Yokohama 220, 2-4-3, Okano

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 12期

关键词：

LASERS; SEMICONDUCTOR JUNCTION LASERS; EPITAXIAL GROWTH;

D O I：

10.1049/el:19920725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using InGaAsP lattice matched to GaAs, InGaAs/GaAs/InGaAsP/InGaP 0.98-mu-m GRINSCH SL-SQW lasers were fabricated for the first time. A high characteristic temperature of 215 K was measured at 10-70-degrees-C. A CW light output power of over 300 mW was achieved on 3-mu-m-wide ridge waveguide lasers with current-blocked regions near cavity facets.

引用

页码：1149 / 1150

页数：2

共 5 条

[1] SELF-ALIGNED INGAAS/GAAS/INGAP QUANTUM-WELL LASERS PREPARED BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH 2 GROWTH STEPS [J].