ATOMIC LAYER EPITAXY OF ZNS-TB THIN-FILM ELECTROLUMINESCENT DEVICES

被引：16

作者：

KONG, W

FOGARTY, J

SOLANKI, R

机构：

[1] Department of Electrical Engineering and Applied Physics, Oregon Graduate Institute, Portland, OR 97291-1000

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.112263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fabrication of green light emitting ZnS:Tb thin film electroluminescent devices using atomic layer epitaxy is described. In this investigation, particular emphasis is placed on the effect of Tb doping profiles and concentrations on the emission characteristics. It is shown that rapid thermal anneal of these devices has a significant effect on their emission lifetimes.

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页码：670 / 672

页数：3

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