共 18 条
- [1] ENHANCED PHOTOCONDUCTIVITY IN NITROGEN-DOPED AMORPHOUS SILICON PREPARED BY DC SPUTTERING [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 403 - 407
- [2] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55
- [3] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813
- [4] KURATA H, 1982, 3RD P PHOT SCI ENG C, P77
- [5] PREPARATION AND PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY A CONSECUTIVE, SEPARATED REACTION CHAMBER METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 413 - 417
- [6] KUWANO Y, 1981, 2ND P PHOT SCI ENG C, P55
- [7] LeComber P. G., 1979, Amorphous semiconductors, P251
- [8] Nagels P., 1979, Amorphous semiconductors, P113
- [9] ANOMALOUS VARIATIONS IN CONDUCTIVITY OF A-SI - H WITH NITROGEN DOPING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L485 - L487
- [10] OPTICAL-PROPERTIES AND HYDROGEN CONCENTRATION IN AMORPHOUS SILICON [J]. THIN SOLID FILMS, 1979, 62 (03) : 327 - 336