ELECTRICAL-PROPERTIES OF GLOW-DISCHARGE AMORPHOUS SINX-H THIN-FILMS

被引:26
作者
WATANABE, H [1 ]
KATOH, K [1 ]
YASUI, M [1 ]
机构
[1] STANLEY ELECT CO LTD, RES & DEV LAB, MIDORI KU, YOKOHAMA 227, JAPAN
关键词
D O I
10.1016/0040-6090(83)90338-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:263 / 274
页数:12
相关论文
共 18 条
  • [1] ENHANCED PHOTOCONDUCTIVITY IN NITROGEN-DOPED AMORPHOUS SILICON PREPARED BY DC SPUTTERING
    BAIXERAS, J
    MENCARAGLIA, D
    ANDRO, P
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 403 - 407
  • [2] FRITZSCHE H, 1978, SOLID STATE TECHNOL, V21, P55
  • [3] WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H
    KURATA, H
    HIROSE, M
    OSAKA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L811 - L813
  • [4] KURATA H, 1982, 3RD P PHOT SCI ENG C, P77
  • [5] PREPARATION AND PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY A CONSECUTIVE, SEPARATED REACTION CHAMBER METHOD
    KUWANO, Y
    OHNISHI, M
    TSUDA, S
    NAKASHIMA, Y
    NAKAMURA, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03): : 413 - 417
  • [6] KUWANO Y, 1981, 2ND P PHOT SCI ENG C, P55
  • [7] LeComber P. G., 1979, Amorphous semiconductors, P251
  • [8] Nagels P., 1979, Amorphous semiconductors, P113
  • [9] ANOMALOUS VARIATIONS IN CONDUCTIVITY OF A-SI - H WITH NITROGEN DOPING
    NOGUCHI, T
    USUI, S
    SAWADA, A
    KANOH, Y
    KIKUCHI, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L485 - L487
  • [10] OPTICAL-PROPERTIES AND HYDROGEN CONCENTRATION IN AMORPHOUS SILICON
    PERRIN, J
    SOLOMON, I
    BOURDON, B
    FONTENILLE, J
    LIGEON, E
    [J]. THIN SOLID FILMS, 1979, 62 (03) : 327 - 336