SUBMONOLAYER COVERAGE OF GA-ADATOMS AND B-ADATOMS ON A GE(111) SURFACE

被引：2

作者：

CHENG, C ^{[1
]}

KUNC, K ^{[1
]}

机构：

[1] CNRS, PHYS SOLIDES LAB, F-75252 PARIS 05, FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 65-6卷

关键词：

D O I：

10.1016/0169-4332(93)90726-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

First-principles calculations based on the density-functional theory are performed to investigate the submonolayer coverage of Ga and B adatoms on a Ge(111) surface. We study the stability of the three different surface structures of adatoms, viz. the top-site (T4), the hollow-site (H3) and the substitution-site (S5). Calculations show that the T4 structure is favoured over the H3 structure for Ga adatoms and the S5 over the T4 for B adatoms. It is found that for Ga adatoms, the T4 structure induces a much longer range relaxation on the Ge(111) surface than the H3 one and for B adatoms in the T4 structure, no bond charge between adatoms and surface atoms is formed.

引用

页码：603 / 606

页数：4

共 15 条

[1]

BACHELET GB, 1982, PHYS REV B, V26, P2314

[2] SURFACE DOPING AND STABILIZATION OF SI(111) WITH BORON [J].