RADIATION HARDENED 64-BIT CMOS-SOS RAM

被引:6
作者
KJAR, RA [1 ]
PETERSON, BE [1 ]
BLANDFORD, JT [1 ]
机构
[1] ROCKWELL INT,ANAHEIM,CA 92803
关键词
D O I
10.1109/TNS.1976.4328569
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1728 / 1731
页数:4
相关论文
共 3 条
[1]  
KJAR RA, 1976, IEEE T NS, V23
[2]   INVESTIGATION OF RADIATION EFFECTS AND HARDENING PROCEDURES FOR CMOS-SOS [J].
PEEL, JL ;
PANCHOLY, RK ;
KUHLMANN, GJ ;
OKI, TJ ;
WILLIAMS, RA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2185-2189
[3]   CMOS-SOS NAND GATE SAPPHIRE PHOTOCURRENT COMPENSATION [J].
PHILLIPS, DH .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2617-2620