PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2

[1] AITKEN JM, 1981, EL SOC EXT ABSTR, P768

[2] RIE CONTAMINATION OF ETCHED SILICON SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1822 - 1826

[3] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[4] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[5] INSITU MONITORING OF FILM DEPOSITION USING HE-NE-LASER SYSTEM .1. MEASUREMENTS OF CVD INSULATING FILM AT 6328A [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1233 - 1235

[6] TING CY, 1981, EL SOC EXT ABSTR, P765

[1] AITKEN JM, 1981, EL SOC EXT ABSTR, P768

[2] RIE CONTAMINATION OF ETCHED SILICON SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1822 - 1826

[3] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[4] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[5] INSITU MONITORING OF FILM DEPOSITION USING HE-NE-LASER SYSTEM .1. MEASUREMENTS OF CVD INSULATING FILM AT 6328A [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1233 - 1235

[6] TING CY, 1981, EL SOC EXT ABSTR, P765