DEACTIVATION OF GROUP-III ACCEPTORS IN SILICON DURING KEV ELECTRON-IRRADIATION

被引：37

作者：

SAH, CT ^{[1
]}

SUN, JYC ^{[1
]}

TZOU, JJ ^{[1
]}

PAN, SCS ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 10期

关键词：

D O I：

10.1063/1.94167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：962 / 964

页数：3

共 9 条

[1] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].

EVERHART, TE ;

HOFF, PH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&

[2]

SAH CH, UNPUB

[3] EFFECTS OF KEV ELECTRON-IRRADIATION ON THE AVALANCHE-ELECTRON GENERATION RATES OF 3 DONORS ON OXIDIZED SILICON [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJT .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4378-4381

[4] STUDY OF THE ATOMIC MODELS OF 3 DONOR-LIKE TRAPS ON OXIDIZED SILICON WITH ALUMINUM GATE FROM THEIR PROCESSING DEPENDENCES [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJT .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5864-5879

[5] GENERATION-ANNEALING KINETICS AND ATOMIC MODELS OF A COMPENSATING DONOR IN THE SURFACE SPACE-CHARGE LAYER OF OXIDIZED SILICON [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJT .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :944-956

[6] DEACTIVATION OF THE BORON ACCEPTOR IN SILICON BY HYDROGEN [J].

SAH, CT ;

SUN, JY ;

TZOU, JJ .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :204-206

[7]

SAH CT, 1982, IEDM 82, P752

[8]

SAH CT, 1983, 1983 P INT S VLSI TS, P174

[9]

1982, HDB CHEM PHYSICS

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