DEEP LEVELS IN ZINC PHOSPHIDE

被引：18

作者：

SUDA, T ^{[1
]}

BUBE, RH ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.95400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：775 / 777

页数：3

共 10 条

[1] PAIR TRANSITIONS IN ZN3P2 [J].

BRIONES, F ;

WANG, FC ;

BUBE, RH .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :805-807

[2] EVIDENCE OF P-N HOMOJUNCTION FORMATION IN ZN3P2 [J].

CATALANO, A ;

BHUSHAN, M .

APPLIED PHYSICS LETTERS, 1980, 37 (06) :567-569

[3] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

[4] ZINC PHOSPHIDE ZINC-OXIDE HETEROJUNCTION SOLAR-CELLS [J].

NAYAR, PS ;

CATALANO, A .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :105-107

[5] PROPERTIES OF ZN3P2 THIN-FILMS GROWN BY IONIZED-CLUSTER BEAM DEPOSITION [J].

SUDA, T ;

KANNO, T ;

KURITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L777-L779

[6] POLYCRYSTALLINE ZN3P2/INDIUM-TIN OXIDE SOLAR-CELLS [J].

SUDA, T ;

SUZUKI, M ;

KURITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L656-L658

[7]

Suda T., 1982, Japanese Journal of Applied Physics, Supplement, V21, P63

[8]

WANG FC, 1981, J CRYST GROWTH, V55, P268, DOI 10.1016/0022-0248(81)90024-5

[9] ELECTRICAL-PROPERTIES OF ZN3P2 SINGLE-CRYSTALS [J].

WANG, FC ;

FAHRENBRUCH, AL ;

BUBE, RH .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :75-88

[10] BARRIER HEIGHTS OF EVAPORATED METAL CONTACTS ON ZN3P2 [J].

WYETH, NC ;

CATALANO, A .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2286-2288

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