NEW EXPERIMENTAL-TECHNIQUE FOR FAST AND ACCURATE MOSFET THRESHOLD EXTRACTION

被引：10

作者：

CORSI, F

MARZOCCA, C

PORTACCI, GV

机构：

[1] Dipartimento di Elettrotecnica ed Elettronica, Politecnico di Bari, Via Orabona 4

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 15期

关键词：

MOSFETS; SEMICONDUCTOR DEVICE TESTING;

D O I：

10.1049/el:19930910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold voltage extraction for MOS devices is translated into the easier task of locating a minimum in a derived function of I(DS) and V(GS). The technique, which provided excellent results on both simulated (SPICE) and experimental data, has been tested on several MOSFETs from different processes and has been implemented into an automated tool instead of more costly optimisation based techniques.

引用

页码：1358 / 1360

页数：3

共 4 条

[1] A NEW MEASUREMENT METHOD OF MOS-TRANSISTOR PARAMETERS [J].