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WHY MUONS AND PROTONS ARE DEEP DONORS IN SI AND GE
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[2]
CHARACTERISTICS OF AND TRANSITIONS AMONG MUON STATES IN SILICON
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1981, 8 (4-6)
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IMPURITY TRAPPING EFFECTS IN THE LOCALIZATION OF MUONS IN SOLIDS
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
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LOW-TEMPERATURE SPECTRUM AND RELAXATION OF MUONIUM IN SILICON
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HYPERFINE INTERACTIONS,
1981, 8 (4-6)
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A REVIEW OF THE EXPERIMENTAL RESULTS ON IMPURITY CENTERS IN ELEMENTAL SEMICONDUCTORS OBTAINED BY MU-SR AND OTHER TECHNIQUES
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HALLER EE, 1981, HYP INT, V8, P401
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LARGE UNIT-CELL SEMI-EMPIRICAL MOLECULAR-ORBITAL APPROACH TO THE PROPERTIES OF SOLIDS .1. GENERAL-THEORY
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HARKER AH, 1979, AERE R8598 HARW REP
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VALLEY-ORBIT INTERACTION AND EFFECTIVE-MASS THEORY FOR INDIRECT GAP SEMICONDUCTORS
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1977, 10 (24)
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