EFFECT OF HEATING SAMPLES DURING PULSED ELECTRON-BEAM ANNEALING ON THE OPEN-CIRCUIT VOLTAGE OF SILICON SOLAR-CELLS

被引：1

作者：

LAUGIER, A

BARBIER, D

DOGHMANE, MS

CHEMISKY, G

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1983554

中图分类号：

学科分类号：

摘要：

引用

页码：369 / 373

页数：5

共 8 条

[1]

BARBIER D, 1982, UNPUB LASER SOLID IN

[2]

CHANTRE A, 1981, LASER ELECTRON BEAM, P385

[3] MELTING AND FREEZING KINETICS INDUCED BY PULSED ELECTRON-BEAM ANNEALING IN ION-IMPLANTED SILICON [J].

CHEMISKY, G ;

BARBIER, D ;

LAUGIER, A .

JOURNAL DE PHYSIQUE, 1983, 44 (NC-5) :91-95

[4]

GREENWALD A, COMMUNICATION

[5] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[6]

Laugier A., 1982, Fourth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P1007

[7] DISLOCATION DEFECT STATES IN SILICON [J].

PATEL, JR ;

KIMERLING, LC .

JOURNAL DE PHYSIQUE, 1979, 40 :67-70

[8] ELECTRON-MICROSCOPY STUDIES OF PULSED ELECTRON-BEAM ANNEALING IN PHOSPHORUS-IMPLANTED SILICON [J].

THOLOMIER, M ;

PITAVAL, M ;

AMBRI, M ;

BARBIER, D ;

LAUGIER, A .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1588-1594

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