ELECTRON-MICROSCOPY STUDIES OF PULSED ELECTRON-BEAM ANNEALING IN PHOSPHORUS-IMPLANTED SILICON

被引：4

作者：

THOLOMIER, M ^{[1
]}

PITAVAL, M ^{[1
]}

AMBRI, M ^{[1
]}

BARBIER, D ^{[1
]}

LAUGIER, A ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON, PHYS MAT LAB, F-69621 VILLEURBANNE, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.332142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1588 / 1594

页数：7

共 19 条

[1] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J].

BAERI, P ;

FOTI, G ;

POATE, JM ;

CULLIS, AG .

PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2036-2039

[2]

BARBIER D, 1981, J MICROSC SPECT ELEC, V6, P513

[3] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J].

BELL, RO ;

TOULEMONDE, M ;

SIFFERT, P .

APPLIED PHYSICS, 1979, 19 (03) :313-319

[4] LASER ANNEALING OF SELF-ION DAMAGED SILICON [J].

FOTI, G ;

CAMPISANO, SU ;

BAERI, P ;

RIMINI, E ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :701-703

[5]

GAUTRON G, UNPUB

[6]

GREENWALD A, COMMUNICATION

[7] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[8]

HOONHOUT D, 1981, LASER ELECTRON BEAMS, V1, P31

[9]

KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[10]

Michel J., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P1007

← 1 2 →