LASER ANNEALING OF SELF-ION DAMAGED SILICON

被引：4

作者：

FOTI, G ^{[1
]}

CAMPISANO, SU ^{[1
]}

BAERI, P ^{[1
]}

RIMINI, E ^{[1
]}

TSENG, WF ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.91260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Partially damaged self-ion implanted Si(100) has been irradiated by a ruby laser pulse (λ=0.69 μm, tp=15 ns). Channeling effect technique measurements and TEM micrographs show the reordering of the implanted layer in the laser energy range 1.5-2.5 J/cm2. No polycrystalline transition has been detected. Calculations in terms of local melting of the disordered zone explain the experimental data.

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页码：701 / 703

页数：3

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