EPITAXIAL LAYER GROWTH OF AG(111)-FILMS ON SI(100)

被引：29

作者：

VONHOEGEN, MH ^{[1
]}

SCHMIDT, T ^{[1
]}

HENZLER, M ^{[1
]}

MEYER, G ^{[1
]}

WINAU, D ^{[1
]}

RIEDER, KH ^{[1
]}

机构：

[1] FREE UNIV BERLIN, INST EXPTL PHYS, D-14195 BERLIN, GERMANY

来源：

SURFACE SCIENCE | 1995年 / 331卷

关键词：

ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT MEASUREMENTS; ELECTRON-SOLID INTERACTIONS; SCATTERING; DIFFRACTION; EPITAXY; GROWTH; HETEROJUNCTIONS; LOW ENERGY ELECTRON DIFFRACTION (LEED); LOW INDEX SINGLE CRYSTAL SURFACES; METALLIC FILMS; METAL-SEMICONDUCTOR INTERFACES; METAL-SEMICONDUCTOR NONMAGNETIC THIN FILM STRUCTURES; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SILICON; SILVER; SINGLE CRYSTAL EPITAXY; SURFACE ELECTRICAL TRANSPORT; SURFACE STRUCTURE;

D O I：

10.1016/0039-6028(95)00320-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Deposition of Ag at 130 K results in epitaxial layer growth of a continuous Ag(111)-film on Si(100). The azimuthal orientation of the Ag(111)-crystallites is determined by the dimer rows of the Si(100) terraces and alternates by 90 degrees from step to step of the Si substrate. In one direction the highly mismatched (100)- and (111)-lattices fit nearly exactly with a ratio of 4 Ag atoms to 3 Si atoms. In the other direction the remaining lattice mismatch of 2.2% is adjusted by a parallel array of interfacial dislocations which are observed with LEED (via spot splitting) and STM.

引用

页码：575 / 579

页数：5

共 16 条

[1] THE MULTILAYER GROWTH MODE IN THE EPITAXY OF AG ON AG(111) ANALYZED BY SPALEED [J].

AMMER, C ;

SCHAEFER, T ;

TEICHERT, C ;

MEINEL, K ;

KLAUA, M .

SURFACE SCIENCE, 1994, 307 :570-575

[2] PERIODIC LATTICE-DISTORTIONS IN EPITAXIAL-FILMS OF FE(110) ON W(110) [J].

GRADMANN, U ;

WALLER, G .

SURFACE SCIENCE, 1982, 116 (03) :539-548

[3] A LEED-AES STUDY OF THE GROWTH OF AG FILMS ON SI(100) [J].

HANBUCKEN, M ;

NEDDERMEYER, H .

SURFACE SCIENCE, 1982, 114 (2-3) :563-573

[4]

HORNVONHOEGEN M, 1993, SURF SCI, V298, P29, DOI 10.1016/0039-6028(93)90077-W

[5]

HORNVONHOEGEN M, 1993, SURF SCI, V284, P53, DOI 10.1016/0039-6028(93)90524-N

[6] REENTRANT LAYER-BY-LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF METAL-ON-METAL SUBSTRATES [J].

KUNKEL, R ;

POELSEMA, B ;

VERHEIJ, LK ;

COMSA, G .

PHYSICAL REVIEW LETTERS, 1990, 65 (06) :733-736

[7] SPA-LEED STUDIES OF GROWTH OF AG ON AG(111) AT LOW-TEMPERATURES [J].

LUO, EZ ;

WOLLSCHLAGER, J ;

WEGNER, F ;

HENZLER, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 60 (01) :19-25

[8] LOW-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDY OF NUCLEATION, PERCOLATION, AND GROWTH OF ULTRATHIN AG FILMS ON SI(111)7X7 [J].

MEYER, G ;

RIEDER, KH .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3560-3562

[9]

Nabarro F.R.N., 1987, THEORY CRYSTAL DISLO

[10] LAYER-BY-LAYER GROWTH OF AG ON AG(111) INDUCED BY ENHANCED NUCLEATION - A MODEL STUDY FOR SURFACTANT-MEDIATED GROWTH [J].

ROSENFELD, G ;

SERVATY, R ;

TEICHERT, C ;

POELSEMA, B ;

COMSA, G .

PHYSICAL REVIEW LETTERS, 1993, 71 (06) :895-898

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