RECOMBINATION-INDUCED HEATING OF FREE-CARRIERS IN A SEMICONDUCTOR

被引:41
作者
BIMBERG, D [1 ]
MYCIELSKI, J [1 ]
机构
[1] UNIV WARSAW,INST THEORET PHYS,PL-00681 WARSAW,POLAND
来源
PHYSICAL REVIEW B | 1985年 / 31卷 / 08期
关键词
D O I
10.1103/PhysRevB.31.5490
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5490 / 5493
页数:4
相关论文
共 10 条
[1]  
BIMBERG D, 1984, SPRINGER SERIES SOLI, V53, P136
[2]   DEFORMATION POTENTIAL IN SEMICONDUCTORS SCREENED BY FREE CARRIERS [J].
BOGUSLAWSKI, P ;
MYCIELSKI, J .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (13) :2413-2417
[3]   LOCALIZATION INDUCED ELECTRON-HOLE TRANSITION RATE ENHANCEMENT IN GAAS QUANTUM WELLS [J].
CHRISTEN, J ;
BIMBERG, D ;
STECKENBORN, A ;
WEIMANN, G .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :84-86
[4]  
CONWELL EM, 1967, SOLID STATE PHYSIC S, V9
[5]   THERMALIZATION OF ELECTRON-HOLE PLASMA IN GAAS - CASE OF RESONANT EXCITATION [J].
GOEBEL, EO ;
HILDEBRAND, O .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (02) :645-652
[6]   OPTICAL-PROPERTIES OF HIGHLY EXCITED DIRECT GAP SEMICONDUCTORS [J].
KLINGSHIRN, C ;
HAUG, H .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1981, 70 (05) :315-398
[7]  
KOGAN SM, 1963, SOV PHYS-SOL STATE, V4, P1813
[8]   PHONON OPTICS IN SEMICONDUCTORS - PHONON GENERATION AND ELECTRON-PHONON SCATTERING IN N-GAAS EPILAYERS .1. THEORY [J].
LAX, M ;
NARAYANAMURTI, V .
PHYSICAL REVIEW B, 1981, 24 (08) :4692-4713
[9]   DIRECT EVIDENCE FOR SCREENING OF CARRIER ACOUSTIC PHONON INTERACTION AT LOW TO MEDIUM CARRIER DENSITIES IN GAAS [J].
MUNZEL, H ;
BIMBERG, D ;
STECKENBORN, A .
PHYSICA B & C, 1983, 117 (MAR) :214-216
[10]   PICOSECOND RELAXATION PROCESSES OF HIGH-DENSITY ELECTRON-HOLE PLASMA IN CDSE [J].
YOSHIDA, H ;
SAITO, H ;
SHIONOYA, S .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 104 (01) :331-340