OBSERVATION OF DIPOLAR INTERACTIONS BETWEEN PB0 DEFECTS AT THE (111) SI/SIO2 INTERFACE

被引:30
作者
STESMANS, A
VANGORP, G
机构
[1] Departement Natuurkunde, Katholieke Universiteit Leuven
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 06期
关键词
D O I
10.1103/PhysRevB.42.3765
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dipole-dopole (DD) interactions between Pb0 (Si?Si3) defects at the two-dimensional (2D) (111) Si/SiO2 interface are revealed by electron-spin resonance. A DD fine-structure doublet develops with increasing [Pb0] resulting in a line shape characteristic of DD interactions within a 2D dilute spin system, for which the observations are of fundamental interest. The residual line shape, devoid of DD effects, has been deduced. It is shown that a DD line broadening previously calculated for Pb0 is too small, thus questioning the assumed random-distribution model. © 1990 The American Physical Society.
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页码:3765 / 3768
页数:4
相关论文
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