ELECTRON-MOBILITY AND VELOCITY IN COMPENSATED GAAS

被引：26

作者：

XU, JM ^{[1
]}

BERNHARDT, BA ^{[1
]}

SHUR, M ^{[1
]}

CHEN, CH ^{[1
]}

PECZALSKI, A ^{[1
]}

机构：

[1] HONEYWELL INC,HONEYWELL SYST & RES CTR,MINNEAPOLIS,MN 55413

来源：

关键词：

D O I：

10.1063/1.97162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：342 / 344

页数：3

共 16 条

[1] BAIER SM, 1985, IEEE T ELECTRON DEVI, V32
[2] Brooks H., 1955, ADV ELECTRON, V7, P85
[3] MEASUREMENT OF THE LOW-FIELD ELECTRON-MOBILITY AND COMPENSATION RATIO PROFILES IN GAAS FIELD-EFFECT TRANSISTORS
FOLKES, PA
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (06) : 431 - 433
[4] SUBTHRESHOLD ELECTRON VELOCITY-FIELD CHARACTERISTICS OF GAAS AND IN0.53GA0.47AS
HAASE, MA
ROBBINS, VM
TABATABAIE, N
STILLMAN, GE
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2295 - 2298
[5] JAY PR, 1981, IEEE T ELECTRON DEVI, V2
[6] LEE K, 1984, THESIS U MINNESOTA
[7] LEE K, 1984, IEEE T ELECTRON DEV, V31, P3
[8] NAG B, 1980, ELECTRON TRANSPORT C
[9] PECZALSKI A, UNPUB
[10] POZELA J, 1980, SOLID STATE ELECTRON, V23