MEASUREMENT OF THE LOW-FIELD ELECTRON-MOBILITY AND COMPENSATION RATIO PROFILES IN GAAS FIELD-EFFECT TRANSISTORS

被引：21

作者：

FOLKES, PA

机构：

[1] Bell Communications Research, Murray, Hill, NJ, USA, Bell Communications Research, Murray Hill, NJ, USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.96521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

12

引用

收藏

页码：431 / 433

页数：3

相关论文

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