DEEP-LEVEL AND PROFILE EFFECTS UPON LOW-NOISE ION-IMPLANTED GAAS-MESFETS

被引：7

作者：

TREW, RJ

KHATIBZADEH, MA

MASNARI, NA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 05期

关键词：

D O I：

10.1109/T-ED.1985.22042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：877 / 882

页数：6

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