A MODELING TECHNIQUE FOR CHARACTERIZING ION-IMPLANTED MATERIAL USING C-V AND DLTS DATA

[1] ELECTRICAL TRAPS IN GAAS MICROWAVE FETS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 297 - 298

[2] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380

[3] MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299-K AND 105-K [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 205 - 211

[4] Golio J. M., 1983, IEEE 1983 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, P22

[5] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 140 - 149

[6] MAGNETOTRANSCONDUCTANCE MOBILITY MEASUREMENTS OF GAAS-MESFETS [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 265 - 267

[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (02) : 212 - &

[8] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +

[9] INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1839 - 1845

[10] BACKGATING IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 963 - 968

[1] ELECTRICAL TRAPS IN GAAS MICROWAVE FETS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 297 - 298

[2] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380

[3] MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299-K AND 105-K [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 205 - 211

[4] Golio J. M., 1983, IEEE 1983 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, P22

[5] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 140 - 149

[6] MAGNETOTRANSCONDUCTANCE MOBILITY MEASUREMENTS OF GAAS-MESFETS [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 265 - 267

[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (02) : 212 - &

[8] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) : 399 - +

[9] INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1839 - 1845

[10] BACKGATING IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 963 - 968