EXPERIMENTAL STUDY OF EFFECT OF WATER ON ANODIC SILICON OXIDE AND OXIDE/SEMI-CONDUCTOR INTERFACES

被引：7

作者：

NANNONI, R

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1968年 / 3卷 / 03期

关键词：

D O I：

10.1051/rphysap:0196800303026500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：265 / &

共 33 条

AMSEL, G ;

SAMUEL, D .

[2]

CHERKI C, 1966, REV GEN ELECTR, V75, P769

[3]

CHERKI C, 1966, 64FR240DGRST RAPP

[4]

COELHO R, 1965, DIELECTRIQUES ISOLAN

[5]

CROSET M, PERSONAL COMMUNICATI

[6] A-C PROPERTIES OF ANODIC OXIDE FILMS ON SILICON [J].

DREINER, R .

[7]

DREINER R, 1966, MAY CLEV M EL SOC

[8]

DUFFEK EF, 1965, ELECTROCHEM TECHNOL, V3, P75

FORLANI, F ;

MINNAJA, N ;

PAGIOLA, E .

PHYSICA STATUS SOLIDI, 1966, 17 (02) :657-+

[10] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].

GARRETT, CGB ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1955, 99 (02) :376-387