ROUND ROBIN STUDY OF IMPURITY ANALYSIS IN GALLIUM-ARSENIDE USING SECONDARY ION MASS-SPECTROMETRY

被引：28

作者：

HOMMA, Y

KUROSAWA, S

YOSHIOKA, Y

SHIBATA, M

NOMURA, K

NAKAMURA, Y

机构：

[1] MATSUSHITA TECHNORES INC, MORIGUCHI, OSAKA 570, JAPAN

[2] SUMITOMO ELECT IND LTD, RES & DEV GRP, OSAKA 554, JAPAN

[3] MITSUBISHI MET CORP, CENT RES INST, OMIYA, SAITAMA 330, JAPAN

[4] NIPPON MIN CORP, CENT RES LABS, TODA, SAITAMA 335, JAPAN

来源：

关键词：

D O I：

10.1021/ac00291a041

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：2928 / 2934

页数：7

共 5 条

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[2]

KUROSAWA S, 1984, 4TH P INT C SEC ION, P107

[3]

MORRISON GH, 1982, 3RD P INT C SEC ION, P244

[4] SIMS INVESTIGATION OF VERY SHALLOW IMPLANTED SI LAYERS [J].

SHEPHERD, FR ;

ROBINSON, WH ;

BROWN, JD ;

PHILLIPS, BF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :991-994

[5] LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS [J].

WEINER, ME ;

LASSOTA, DT ;

SCHWARTZ, B .