In situ real-time temperature and thickness measurement for Si/SiGe growth on MBE and RTCVD systems

被引：6

作者：

Moller, H ^{[1
]}

Bobel, FG ^{[1
]}

Hertel, B ^{[1
]}

Lindenberg, T ^{[1
]}

Ritter, G ^{[1
]}

机构：

[1] INST HALBLEITERPHYS,FRANKFURT,ODER,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00352-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For in situ film thickness and temperature control RSPI has been proven to be a standard measurement tool for a wide range of material combinations (Si, GaAs, GaAlAs, GaN, InAs, InP, etc.) and technologies (MBE/CBE [1], Si oxidation [3], RTCVD [5]) leading to increased yield (e.g. from 33% up to nearly 100% for VCSEL manufacturing) and improved reproducibility (typically 0.1% for thickness and 0.3% for temperature) [1]. This paper discusses the influence of MBE wafer rotation on the RSPI measurement and efforts to increase signal quality. Thin Si80Ge20 films on Si have been grown in an RTCVD system, monitored by an 450 nm RSPI thickness measurement.

引用

页码：327 / 332

页数：6