OPTICAL BISTABILITY IN INSB AT ROOM-TEMPERATURE WITH 2-PHOTON EXCITATION

被引：60

作者：

KAR, AK

MATHEW, JGH

SMITH, SD

DAVIS, B

PRETTL, W

机构：

来源：

关键词：

D O I：

10.1063/1.93923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：334 / 336

页数：3

共 12 条

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[5] JOHNSTON AM, 1980, PHYS REV B, V22, P625
[6] DYNAMIC NON-LINEAR OPTICAL PROCESSES IN SEMICONDUCTORS
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[J]. ADVANCES IN PHYSICS, 1981, 30 (06) : 697 - 800
[7] THE MICROSCOPIC MECHANISM OF 3RD-ORDER OPTICAL NONLINEARITY IN INSB
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[J]. OPTICS COMMUNICATIONS, 1980, 35 (02) : 221 - 226
[8] BAND-GAP-RESONANT NON-LINEAR REFRACTION IN III-V SEMICONDUCTORS
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[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (03) : 197 - 200
[9] OPTICAL BISTABILITY AND SIGNAL AMPLIFICATION IN A SEMICONDUCTOR CRYSTAL - APPLICATIONS OF NEW LOW-POWER NON-LINEAR EFFECTS IN INSB
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